FDS2672
Manufacturer:
On Semiconductor
Mfr.Part #:
FDS2672
Datasheet:
Description:
MOSFETs SOIC-8 SMD/SMT N-Channel number of channels:1 2.5 W 200 V Continuous Drain Current (ID):3.9 A 43 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 200 V |
| Length | 5 mm |
| Width | 4 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Resistance | 70 mΩ |
| Height | 1.5 mm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Number of Elements | 1 |
| Current Rating | 3.9 A |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 2.5 W |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 2.9 V |
| Number of Channels | 1 |
| Input capacitance | 2.535 nF |
| Continuous Drain Current (ID) | 3.9 A |
| Rds On Max | 70 mΩ |
| Drain to Source Voltage (Vdss) | 200 V |
| Turn-On Delay Time | 22 ns |
| Turn-Off Delay Time | 35 ns |
| Element Configuration | Single |
| Fall Time | 10 ns |
| Rise Time | 10 ns |
| Dual Supply Voltage | 200 V |
| Gate Charge | 43 nC |
| Drain to Source Resistance | 59 mΩ |
| Nominal Vgs | 2.9 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 200 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Gate to Source Threshold Voltage | 2 V |
| FET Type(Transistor Polarity) | N-Channel |
Stock: 14
Distributors
pcbx
pcbxUnit Price$2.29421
Ext.Price$2.29421
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $2.29421 | $2.29421 |
| 10 | $1.97702 | $19.77020 |
| 25 | $1.83885 | $45.97125 |
| 50 | $1.71034 | $85.51700 |
| 100 | $1.59080 | $159.08000 |
| 300 | $1.54324 | $462.97200 |
| 500 | $1.49710 | $748.55000 |
| 1000 | $1.45616 | $1456.16000 |